NTLJD2105L
TYPICAL PERFORMANCE CURVES (T J = 25 ° C unless otherwise noted)
Figure 5. Turn?on
(V in = 1.5 V, R L = 3 W , R1 = 1 k W , R2 = 0, C1 = 47 nF)
Figure 7. Turn?on
(V in = 1.5 V, R L = 3 W , R1 = 10 k W , R2 = 1 k W , C1 = 47 nF)
Figure 9. Turn?on
(V in = 3 V, R L = 3 W , R1 = 10 k W , R2 = 1 k W , C1 = 47 nF)
Figure 6. Turn?off
(V in = 1.5 V, R L = 3 W , R1 = 1 k W , R2 = 0, C1 = 47 nF)
Figure 8. Turn?off
(V in = 1.5 V, R L = 3 W , R1 = 10 k W , R2 = 1 k W , C1 = 47 nF)
Figure 10. Turn?off
(V in = 3 V, R L = 3 W , R1 = 10 k W , R2 = 1 k W , C1 = 47 nF)
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相关代理商/技术参数
NTLJD3115P 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET
NTLJD3115PT1G 功能描述:MOSFET PFET 2X2 20V 4.1A 106MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTLJD3115PTAG 功能描述:MOSFET PFET 2X2 20V 4.1A 106MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTLJD3119C 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 V/−20 V, 4.6 A/−4.1 A, uCool Complementary, 2x2 mm, WDFN Package
NTLJD3119CTAG 功能描述:MOSFET COMP 2X2 20V 3.8A 100mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTLJD3119CTBG 功能描述:MOSFET COMP 2X2 20V 3.8A 100mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTLJD3181PZ 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −20 V, −4.0 A, Cool Dual P−Channel, ESD, 2x2 mm WDFN Package
NTLJD3181PZTAG 功能描述:MOSFET 20V UCOOL DUAL P-CHN 4.1A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube